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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *High Switching Speed *Low Collector Saturation Voltage *High Reliability APPLICATIONS *Switching regulators *Ultrasonic generators *Solid state relay *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range ww w scs .i VALUE 500 V 400 10 7 2 50 150 -55~150 V V A A W UNIT .cn mi e PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 0.2A; IB= 0 IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 4A; IB= 0.8A B 2SC4622 MIN 400 500 10 TYP. MAX UNIT V V V 0.8 1.2 V V mA mA IC= 4A; IB= 0.8A B VCB= 450V ; IE=0 Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w. w sem isc VEB= 10V; IC=0 IC= 4A; VCE= 5V IC= 5A; IB1= 1A; IB2= -2A; RL= 30; PW=20s; Duty Cycle2% .cn i 10 0.1 0.1 1.0 2.5 0.5 s s s isc Websitewww.iscsemi.cn 2 |
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